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| CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 1/8 MTN13N50E3 Description BVDSS : 500V RDS(ON) : 0.48 ID : 13A The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features * BVDSS=550V typically @ Tj=150 * Low On Resistance * Simple Drive Requirement * Low Gate Charge * Fast Switching Characteristic * RoHS compliant package Applications * Power Factor Correction * LCD TV Power * Full and Half Bridge Power Symbol MTN13N50E3 Outline TO-220 GGate DDrain SSource GDS MTN13N50E3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25C) Parameter Symbol Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 2/8 Limits Unit Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=7.2mH, ID=12.2 Amps Avalanche Current (Note 2) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS ID ID IDM EAS IAR dv/dt TL TPKG Pd Tj, Tstg 500 30 13 8 52 250 13 3.0 300 260 195 1.72 -55~+150 V V A A A mJ A V/ns C C W W/C C Note : *1. TJ=+25 to +150. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD=10A, dI/dt<100A/s, VDD Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 0.64 62.5 Unit C/W C/W MTN13N50E3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. 550 0.5 15 0.38 40 10 15 16 30 48 34 2222 180 17 392 3529 Max. 4.0 100 20 200 0.48 1.5 13 52 Unit V V V/C V S nA A A Test Conditions Static BVDSS 500 BVDSS BVDSS/Tj VGS(th) 2.0 *GFS IGSS IDSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 3/8 VGS=0, ID=250A VGS=0, ID=250A, Tj=150C Reference to 25C, ID=250A VDS = VGS, ID=250A VDS =15V, ID=13A VGS=30 VDS =500V, VGS =0 VDS =400V, VGS =0, Tj=125C VGS =10V, ID=7.8A nC ID=13A, VDD=250V, VGS=10V VDD=250V, ID=13A, VGS=10V, RG=9.1 ns pF VGS=0V, VDS=25V, f=1MHz V A ns nC IS=13A, VGS=0V VD=VG=0, VS=1.3V VGS=0, IF=13A, dI/dt=100A/s *Pulse Test : Pulse Width 300s, Duty Cycle2% Ordering Information Device MTN13N50E3 Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Marking 13N50 MTN13N50E3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 4/8 MTN13N50E3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 5/8 MTN13N50E3 CYStek Product Specification CYStech Electronics Corp. Test Circuit and Waveforms Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 6/8 MTN13N50E3 CYStek Product Specification CYStech Electronics Corp. Test Circuit and Waveforms(Cont.) Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 7/8 MTN13N50E3 CYStek Product Specification CYStech Electronics Corp. TO-220AB Dimension Marking: E C Spec. No. : C405E3 Issued Date : 2008.12.01 Revised Date : Page No. : 8/8 A D B H I G 4 P M 3 2 1 N K Device Name 13N50 Date Code O 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical DIM A B C D E G H Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: KFC ; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN13N50E3 CYStek Product Specification |
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